BFR 740EL3 E6829

BFR740EL3 SiGe:C NPN RF bipolar transistor Product description The BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in a low profile package. Feature list • • • • • Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless package High sensitivity low noise laser receiver matrix High RF transistor hFE controllability Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • • Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Lidar based systems Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR740EL3 / BFR740EL3E6829XTSA1 TSLP-3-10 1=B R2 15000 2=C 3=E Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information TSLP-3-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.0 3.5 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 4 Collector current IC 40 Total power dissipation1) Ptot Junction temperature TJ Storage temperature TStg mA – 160 mW TS ≤ 105 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Unit Min. Typ. Max. – 280 – Note or test condition K/W 180 160 140 100 P tot [mW] 120 80 60 40 20 0 Figure 1 Datasheet 0 25 50 75 TS[°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4 4.7 – Collector emitter leakage current ICES – 1 1 400 1) nA 40 1) VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 E-B short circuited Collector base leakage current ICBO 1 40 1) VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 40 1) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 210 250 VCE = 3 V, IC = 25 mA, pulse measured 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Note or test condition Min. Typ. Max. – 42 – GHz VCE = 3 V, IC = 25 mA, f = 2 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.09 0.12 Collector emitter capacitance CCE 0.3 – Emitter base capacitance CEB 0.4 1 Unit VCE = 3 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. 3 VC VB GND Bias-T RFIn In 1 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 35 29.5 Unit Note or test condition Max. – dB 0.45 27.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 7 Out 2 Figure 2 Parameter Bias-T RFOut IC = 15 mA IC = 6 mA dBm 21 3.5 ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 31 29 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.45 26.5 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet – dB dBm 21 7 6 ZS = ZL = 50 Ω, IC = 15 mA v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 28 27 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.45 25 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 22.5 8 Table 9 – Typ. Unit Note or test condition Max. – dB IC = 15 mA IC = 6 mA dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 25.5 25 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 22.5 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 10 – dB dBm 23 8 ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 24.5 23.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 21 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 23 8 Datasheet – Unit – dB dBm 7 ZS = ZL = 50 Ω, IC = 15 mA v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 11 AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 23.5 21.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 19.5 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 12 – dB dBm 23 8 ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 22 18.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.6 16.5 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 24.5 9 Table 13 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 20 14.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.8 13 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 25 9.5 Datasheet – Unit – dB dBm 8 ZS = ZL = 50 Ω, IC = 15 mA v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 14 AC characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 13 9 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.3 8.5 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 24 9 Table 15 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 3 V, f = 12 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 11 7 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.5 7.5 IC = 6 mA Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Note: Datasheet – dB dBm 20.5 6.5 ZS = ZL = 50 Ω, IC = 15 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 30 120µA 100µA 25 80µA 20 IC [mA] 60µA 15 40µA 10 20µA 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 h FE 10 2 10 −3 10 10 IC [A] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 10 −2 10 −1 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor IC [mA] Electrical characteristics 2 10 1 10 0 10 −1 10 −2 10 −3 10 −4 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V IB [mA] Figure 5 10 10 0 10 −1 10 −2 10 −3 10 −4 10 −5 10 −6 10 −7 0.5 0.55 0.6 0.65 V 0.7 0.75 [V] 0.8 0.85 0.9 BE Figure 6 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 11 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor IB [A] Electrical characteristics 10 −5 10 −6 10 −7 10 −8 10 −9 10 −10 10 −11 10 −12 1 1.5 2 2.5 3 VEB [V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 12 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 45 40 35 4.00V fT [GHz] 30 3.00V 25 2.50V 20 2.00V 15 10 1.00V 5 0 Figure 8 0 5 10 15 20 25 IC [mA] 30 35 40 45 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 28 26 24 22 20 OIP 3 [dBm] 18 16 14 12 10 8 2V, 3V, 2V, 3V, 6 4 2 0 Figure 9 Datasheet 0 5 10 15 I [mA] C 20 2400MHz 2400MHz 5500MHz 5500MHz 25 30 3rd order intercept point at output OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameter 13 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 12 13 14 11 16 17 8 1 19 20 25 24 27 23 22 26 20 IC [mA] 20 21 25 21 1 1 65 17 19 18 25 24 22 23 26 30 15 26 24 25 23 22 25 21 20 10 24 3 2 2 2 24 2 2 1 20 5 2 1.5 2 23 22 2.5 1921 20 23 22 3 24 1921 20 3.5 4 VCE [V] 3rd order intercept point at output OIP3 [dBm] = f(IC , VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 11 13 12 9 8 10 3 4 30 7 Figure 10 8 10 7 9 6 5 25 11 10 15 5 4 3 2 1 5 1.5 9 8 10 6 2 6 9 8 7 5 4 3 2 1 2.5 6 7 8 5 4 3 2 1 3 V CE Datasheet 10 9 7 Figure 11 12 11 IC [mA] 20 6 1 3.5 4 [V] Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 14 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 0.2 C CB [pF] 0.16 0.12 0.08 0.04 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 V [V] CB Figure 12 Collector base capacitance CCB = f(VCB), f = 1 MHz 35 30 G G [dB] 25 ms 20 G ma |S | 2 21 15 10 5 0 Figure 13 Datasheet 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 15 mA 15 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz G ma x [dB] 25 20 5.50GHz 15 10.00GHz 12.00GHz 10 5 0 Figure 14 0 5 10 15 20 25 30 IC [mA] 35 40 45 50 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter 40 35 0.15GHz 30 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz G ma x [dB] 25 20 15 10.00GHz 12.00GHz 10 5 0 Figure 15 Datasheet 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter 16 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 12.0 4 12.0 0.2 5 1 to 12 GHz S te p: 1GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 10 4 5 0.1 −0.1 −10 0.1 −0.2 −5 −4 −0.3 −3 −0.4 1.0 1.0 −0.5 −2 6.0mA −1.5 −1 Figure 16 15.0mA Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 1 to 12 GHz S te p: 1GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 12.0 1 1.5 2 3 10 4 5 12.0 0.1 0.1 −0.1 −10 −0.2 −5 1.0 −0.3 −4 1.0 −3 −0.4 −0.5 −2 −1.5 −1 Figure 17 Datasheet 6.0mA 15.0mA Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 15 mA 17 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 5.5 0.2 5 3.5 2.4 8.0 0.1 1.9 1.5 5.5 10.0 0.1 0 0.2 0.3 0.4 0.5 12.0 −0.1 8.0 10.0 3.5 2.4 1.9 1.5 0.9 1 1.5 0.5 10 0.9 2 3 0.5 4 5 12.0 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 6mA −2 15mA −1.5 −1 Figure 18 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 6 / 15 mA 2 1.8 1.6 NF min [dB] 1.4 1.2 1 0.8 0.6 IC = 15mA 0.4 IC = 6mA 0.2 0 Figure 19 Datasheet 0 2 4 6 f [GHz] 8 10 12 Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 6 / 15 mA 18 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Electrical characteristics 3 2.8 f = 12GHz 2.6 f = 10GHz 2.4 f = 5.5GHz 2.2 f = 3.5GHz NF min [dB] 2 1.8 f = 2.4GHz 1.6 f = 0.9GHz 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Figure 20 0 5 10 IC [mA] 15 20 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter 3 2.8 f = 12GHz 2.6 f = 10GHz 2.4 f = 5.5GHz f = 3.5GHz f = 2.4GHz 2.2 NF50 [dB] 2 f = 0.9GHz 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Figure 21 Note: Datasheet 0 5 10 IC [mA] 15 20 Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 19 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Package information TSLP-3-10 4 Package information TSLP-3-10 Figure 22 Package outline Figure 23 Foot print Figure 24 Marking layout example Figure 25 Tape dimensions Note: Datasheet See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. 20 v1.0 2018-09-26 BFR740EL3 SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 1.0 2018-09-26 First datasheet release. Datasheet 21 v1.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-iws1532679363292 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury